期刊文献+

RF CMOS工艺片上MOM电容的宽频带建模与验证

Broadband Modeling and Verification for the on-Wafer MOM Capacitor Based on the RF CMOS Process
收藏 分享 导出
摘要 提出了一种新的基于RF CMOS技术的金属-氧化物-金属(MOM)电容宽频带建模方法。为了提高模型精度、扩展有效频带,模型在构造时加入了测试焊盘和输入/输出互连线的等效电路。测试结构是基于自身物理结构进行架构的,充分考虑了其在高频时引入的各种寄生效应。互连线模型考虑了高频时的趋肤效应。通过解析提取的方法,在低频时提取测试结构引入的容性和阻性寄生参数。采用物理公式计算互连线的等效电感和电阻以及高频下互连线产生的趋肤效应参数初值。对于模型拓扑结构和参数提取方法,采用40 nm RF CMOS工艺上设计所得连带测试结构MOM电容数据进行验证。在0.25~110 GHz的频率范围内,可得测试和仿真的S参数精确吻合。 A new broadband modeling method for the metal-oxide-metal(MOM)capacitor in RF CMOS technology was presented.To increase the model accuracy and extend the effective frequency band,the equivalent circuits of the test pad and input/output interconnection lines were considered into the model of the MOM capacitor.The test structure was built based on its own physical structure,and the parasitic effects of the structures introduced at high frequency were fully considered in the model topologies.The skin effect in the interconnection line model was considered at high frequency.The capacitive and resistive parasitic parameters introduced by the test structure were extracted at the low frequency with the analysis extraction method.The equivalent inductance and resistance of the interconnection lines,and the initial values of the skin effect parameters generated by the interconnection lines at the high frequency were calculated by the phy-sical formulas.The model topology structure and parameter extraction method were verified by the data of the MOM capacitor with the test structure in40 nm RF CMOS process.Excellent agreements are achieved between the measured and simulated S-parameters in the frequency range over 0.25-110 GHz.
作者 吴园园 刘军 周文勇 李嵬 Wu Yuanyuan;Liu Jun;Zhou Wenyong;Li Wei(The Key Laboratory for RF Circuits and Systems of Ministry of Education,Hangzhou Dianzi University,Hangzhou310037,China;Information Science Academy,CETC,Beijing100086,China)
出处 《微纳电子技术》 北大核心 2019年第4期332-338,共7页 Micronanoelectronic Technology
基金 国家自然科学基金资助项目(61874020).
关键词 RF CMOS技术 金属-氧化物-金属(MOM)电容 宽频带建模 互连线 趋肤效应 紧凑型模型 RF CMOS technology metal-oxide-metal(MOM)capacitor broadband modeling interconnection line skin effect compact model
作者简介 通信作者:刘军,E-mail:ljun77@163.com。
  • 相关文献
投稿分析

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部 意见反馈