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用于各向同性湿法刻蚀中的氮化硅掩膜 被引量:1

The Silicon Nitride Mask for Isotropic Wet Etching
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摘要 在硅的各向同性湿法刻蚀过程中,一般选用HNA溶液(即氢氟酸、硝酸和乙酸的混合溶液)作为刻蚀液.而氮化硅以其很好的耐刻蚀性而优先被选为顶层掩膜材料。在硅片上刻蚀不同的结构,通常需要选择不同的刻蚀液配比。而不同配比对于氮化硅掩膜的刻蚀速率也不一样。分别用PECVD和LPCVD两种方法在〈111)型硅片上沉积了厚度为560和210nm的氮化硅薄膜,研究和对比了它们在8种典型配比刻蚀液下的刻蚀速率,为合理制作所需要厚度的氮化硅掩膜提供有益参考。 During the isotropic etching of silicon, hydrofluoric acid-nitric acid-acetic acid (HNA) solution is generally used as the etching liquor, and silicon nitride is preferentially choosenas the top mask material for its good etching resistance. To etching different structures on a silicon wafer depends on the ratio of the prepared HNAsolution. However, the etching rates of silicon nitride mask in the solution of different proportions are not the same. PECVI) and LPCVD methods were used to deposit a silicon nitride film on the (111 ) type silicon respectively, and the thickness of the deposited SiN film is 560 and 210 nm, respectively. Their etching rates in the etchant of eight typical proportions were studied and compared, which provides a useful reference for depositing the desired thickness of the silicon nitride mask.
作者 刘亚东 张卫平 唐健 汪濙海 邢亚亮 孙殿竣 LIU Yadong, ZHANG Weiping, TANG Jian. WANG Yinghai. XING Yaliang. SUN I)ianjun ( National Key Lab. of Science and Technology on Micrn/Nano Fabrication. Lab. for Thin Film and Micro Fabrication of the Ministry of Education.Shanghai Key Lab. of Navigation and Location-based Services, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 21)11240. CHN)
出处 《半导体光电》 CAS 北大核心 2016年第4期495-498,共4页 Semiconductor Optoelectronics
基金 国家自然科学基金项目(61574093) 航空基金项目(2013ZC57003) 教育部新世纪优秀人才计划项目(NCET-10-0583).
关键词 各向同性刻蚀 掩膜 氮化硅 刻蚀速率 isotropic etching mask silicon nitride etching rate
作者简介 刘亚东(1991-),男,硕士生.主要研究方向为MEMS微陀螺系统的相关设计与研究,以及微加工工艺. 张卫平(1971-),男,博士,教授,博士生导师,主要从事微机电系统、MEMS流体传感与控制,以及微流控生化芯片方面的研究。E-mail:zwp37@163.com
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