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BIST电路在嵌入式非易失性存储器可靠性测试中的应用 预览

The application of BIST circuit in reliability test of embedded nonvolatile memory
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摘要 最近的调查发现,存储器测试的重点都放在了故障测试而忽略了可靠性测试。这里简单介绍BIST故障测试,增加了详细的可靠性测试并得到了实验数据,包括DRB(数据保持),耐久性(擦/写循环),HTOL(高温操作寿命),LTOL(低温操作寿命)。基于存储器可靠性测试的目的,采用了BIST测试的方法,通过一些列的可靠性测试实验,得出在电压为负时进行读“1”操作,电压越正失效的位数越少;在电压为正时进行读“0”操作,电压越小失效位数越少。随着电压增大,失效位数达到峰值。 Recent investigations put the emphasis on the flash defaults testing who ignored the reliability test.With introducing default testing by BIST,here adds reliability testing detailed,including DRB(Data retention bake),endurance(erase/write cycling),HTOL(High temperature operation life),LTOL(Low temperature operation life).Based on the purpose of memory reliability test,BIST test method is adopted.Through the reliability tests,it is concluded that when the voltage is negative,reading"1"operation will lead to fewer bits of positive voltage failure;when the voltage is positive,reading"0"operation will lead to fewer bits of voltage failure.With the increase of voltage,the number of failures reaches a peak.
作者 安宝森 乔树山 刘琦 AN Bao-sen;QIAO Shu-shan;LIU Qi(School of Microelectronics of Chinese Academy of Sciences,Beijing 100000,China;School ofMicroelectronics of Chinese Academy of Sciences,Institute of Microelectronics of Chinese Academy of Sciences,Beijing 100000,China;Semiconductor Manufacturing International Corporation,Shanghai 200000,China)
出处 《电子设计工程》 2019年第11期33-37,42共6页 Electronic Design Engineering
关键词 BIST(内建自测试) 可靠性 DRB 耐久性 故障 HTOL LTOL BIST(Built-In Self-Test) reliability DRB endurance default HTOL LTOL
作者简介 安宝森(1994—),男,山东日照人,硕士研究生。研究方向:非挥发性存储器的内建自测试。
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