A conventional diode-triggered silicon-controlled rectifier(DTSCR) structure with a layout strategy for electrostatic discharge(ESD) protection is presented and confirmed in a 65-nm CMOS technology.The modified device is featured by a scaled-down trigger-diode string, which shortens its turn-on time using a variable scaling factor. To confirm the parasitic resistance adjustments of the modified DTSCR, transmission line pulsing(TLP)/very fast transmission line pulsing(VF-TLP) tests and simulations are performed on the device. Compared to a conventional DTSCR, this structure exhibits an improved turn-on speed and robustness, which are suitable for I/O protection of ESD events in the nanosecond range, particularly the charged-device model(CDM) event.
SCIENCE CHINA Information Sciences
supported by National Natural Science Foundation of China(Grant No.61774005)
Beijing Natural Science Foundation(Grant No.4162030).
Corresponding author:Yuan WANG,(email:email@example.com)