The influences of pin offset on the formation, microstructure and mechanical properties of friction stir welded joint of Ti6 Al4 V and AZ31 B Mg dissimilar alloys were investigated. The results show that sound joints ...The influences of pin offset on the formation, microstructure and mechanical properties of friction stir welded joint of Ti6 Al4 V and AZ31 B Mg dissimilar alloys were investigated. The results show that sound joints are obtained at different offsets. With the offset decreasing from 2.5 to 2.1 mm, the number of Ti alloy fragments is increased, and the stir zone(SZ) is enlarged and the grains in SZ become coarser. A hook-like structure is formed at the Mg/Ti interface and its length is increased with the decrease in pin offset. The Al element has an enrichment trend at the Ti alloy side near the Mg/Ti interface when the offset is decreased, which is beneficial to the bonding of the interface. An Al-rich layer with a thickness of 3–5μm forms at the offset of 2.1 mm. All the joints fracture at the interface and present a mixed ductile-and-brittle fracture mode. The joint tensile strength is increased with the offset decreasing from 2.5 to 2.1 mm, and the maximum tensile strength of 175 MPa is acquired at the offset of 2.1 mm.展开更多
Auxin is an important plant hormone that is essential for growth and development due to its effects on organogenesis, morphogenesis, tropisms, and apical dominance. The functional diversity of auxin highlights the imp...Auxin is an important plant hormone that is essential for growth and development due to its effects on organogenesis, morphogenesis, tropisms, and apical dominance. The functional diversity of auxin highlights the importance of its biosynthesis, transport, and associated responses. In this study, we show that a NAC transcription factor, ANAC092(also named At NAC2 and ORESARA1),known to positively regulate leaf senescence and contribute to abiotic stress responses, also affects primary root development. Plants overexpressing ANAC092 had altered root meristem lengths and shorter primary roots compared with the wild-type control. Additionally, expression of the pro ANAC092::GUS was strongly induced by indole-3-acetic acid. Quantitative real-time RT-PCR(q RT-PCR) analysis revealed that the YUCCA2, PIN, and ARF expression levels were downregulated in ANAC092-overexpressing plants. Moreover, yeast one-hybrid and chromatin immunoprecipitation assays confirmed that ANAC092 binds to the promoters of AUXIN RESPONSE FACTOR 8(ARF8) and PIN-FORMED 4(PIN4). Furthermore, a dual-luciferase assay indicated that ANAC092 decreases ARF8 and PIN4 promoter activities. We also applied a CRISPR/Cas9 system to mutate ANAC092. The roots of three of the analyzed mutants were longer than normal. Collectively, our findings indicate that ANAC092 negatively affects root development by controlling the auxin pathway.展开更多
Absorption coefficient is a physical parameter to describe electromagnetic energy absorption of materials, which is closely related to solar cells and photodetectors. We grow a series of positive-intrinsic-negative(PI...Absorption coefficient is a physical parameter to describe electromagnetic energy absorption of materials, which is closely related to solar cells and photodetectors. We grow a series of positive-intrinsic-negative(PIN) structures on silicon wafer by a gas source molecule beam epitaxy system and the investigate the absorption coefficient through the photovoltaic processes in detail. It is found that the absorption coefficient is enhanced by one order and can be tuned greatly through the thickness of the intrinsic layer in the PIN structure, which is also demonstrated by the 730-nm-wavelength laser irradiation. These results cannot be explained by the traditional absorption theory.We speculate that there could be some uncovered mechanism in this system, which will inspire us to understand the absorption process further.展开更多
The problem of end-face cavity formation in parts produced by cross-wedge rolling was studied in order to reduce material consumption.The cavity depth was measured by the displacemern method.Twenty-one different cases...The problem of end-face cavity formation in parts produced by cross-wedge rolling was studied in order to reduce material consumption.The cavity depth was measured by the displacemern method.Twenty-one different cases of rolling were analysed by finile element method to determine the effects of process parameters such as the wedge tool angle,the temperature of material,the tool velocity and the reduction ratio on the depth of end-face cavities.Relationships between these parameters are examined in order to establish depe ndencies enabling quick and simple selection of a con cavity allowance in order to remove the cavities.The equations for calculating the con cavity allowance were verified in an experimental process for manufacturing ball pins with the use of flat tools.Rolling tests were performed using a billet with its length selected in compliance with the established dependencies.The experimental results demonstrate that the proposed solution is a viable method for end-face cavity removal.展开更多
We report mid-infrared Ge-on-Si waveguide-based PIN diode modulators operating at wavelengths of 3.8 and8 μm. Fabricated 1-mm-long electro-absorption devices exhibit a modulation depth of >35 dB with a 7 V forward...We report mid-infrared Ge-on-Si waveguide-based PIN diode modulators operating at wavelengths of 3.8 and8 μm. Fabricated 1-mm-long electro-absorption devices exhibit a modulation depth of >35 dB with a 7 V forward bias at 3.8 μm, and a similar 1-mm-long Mach–Zehnder modulator has a Vπ· L of 0.47 V · cm. Driven by a 2.5 Vpp RF signal, 60 MHz on-off keying modulation was demonstrated. Electro-absorption modulation at 8 μm was demonstrated preliminarily, with the device performance limited by large contact separation and high contact resistance.展开更多
基金supported by the National Natural Science Foundation of China (No. 51705339)the Aeronautical Science Foundation of China (No. 20171125002).
文摘The influences of pin offset on the formation, microstructure and mechanical properties of friction stir welded joint of Ti6 Al4 V and AZ31 B Mg dissimilar alloys were investigated. The results show that sound joints are obtained at different offsets. With the offset decreasing from 2.5 to 2.1 mm, the number of Ti alloy fragments is increased, and the stir zone(SZ) is enlarged and the grains in SZ become coarser. A hook-like structure is formed at the Mg/Ti interface and its length is increased with the decrease in pin offset. The Al element has an enrichment trend at the Ti alloy side near the Mg/Ti interface when the offset is decreased, which is beneficial to the bonding of the interface. An Al-rich layer with a thickness of 3–5μm forms at the offset of 2.1 mm. All the joints fracture at the interface and present a mixed ductile-and-brittle fracture mode. The joint tensile strength is increased with the offset decreasing from 2.5 to 2.1 mm, and the maximum tensile strength of 175 MPa is acquired at the offset of 2.1 mm.
基金supported by the Ministry of Agriculture of the People’s Republic of China(No.2016ZX08009-001008)The National Natural Science Foundation of China(No.31471152).
文摘Auxin is an important plant hormone that is essential for growth and development due to its effects on organogenesis, morphogenesis, tropisms, and apical dominance. The functional diversity of auxin highlights the importance of its biosynthesis, transport, and associated responses. In this study, we show that a NAC transcription factor, ANAC092(also named At NAC2 and ORESARA1),known to positively regulate leaf senescence and contribute to abiotic stress responses, also affects primary root development. Plants overexpressing ANAC092 had altered root meristem lengths and shorter primary roots compared with the wild-type control. Additionally, expression of the pro ANAC092::GUS was strongly induced by indole-3-acetic acid. Quantitative real-time RT-PCR(q RT-PCR) analysis revealed that the YUCCA2, PIN, and ARF expression levels were downregulated in ANAC092-overexpressing plants. Moreover, yeast one-hybrid and chromatin immunoprecipitation assays confirmed that ANAC092 binds to the promoters of AUXIN RESPONSE FACTOR 8(ARF8) and PIN-FORMED 4(PIN4). Furthermore, a dual-luciferase assay indicated that ANAC092 decreases ARF8 and PIN4 promoter activities. We also applied a CRISPR/Cas9 system to mutate ANAC092. The roots of three of the analyzed mutants were longer than normal. Collectively, our findings indicate that ANAC092 negatively affects root development by controlling the auxin pathway.
基金Supported by the National Natural Science Foundation of China under Grant No 11574362.
文摘Absorption coefficient is a physical parameter to describe electromagnetic energy absorption of materials, which is closely related to solar cells and photodetectors. We grow a series of positive-intrinsic-negative(PIN) structures on silicon wafer by a gas source molecule beam epitaxy system and the investigate the absorption coefficient through the photovoltaic processes in detail. It is found that the absorption coefficient is enhanced by one order and can be tuned greatly through the thickness of the intrinsic layer in the PIN structure, which is also demonstrated by the 730-nm-wavelength laser irradiation. These results cannot be explained by the traditional absorption theory.We speculate that there could be some uncovered mechanism in this system, which will inspire us to understand the absorption process further.
文摘The problem of end-face cavity formation in parts produced by cross-wedge rolling was studied in order to reduce material consumption.The cavity depth was measured by the displacemern method.Twenty-one different cases of rolling were analysed by finile element method to determine the effects of process parameters such as the wedge tool angle,the temperature of material,the tool velocity and the reduction ratio on the depth of end-face cavities.Relationships between these parameters are examined in order to establish depe ndencies enabling quick and simple selection of a con cavity allowance in order to remove the cavities.The equations for calculating the con cavity allowance were verified in an experimental process for manufacturing ball pins with the use of flat tools.Rolling tests were performed using a billet with its length selected in compliance with the established dependencies.The experimental results demonstrate that the proposed solution is a viable method for end-face cavity removal.
基金Engineering and Physical Sciences Research Council(EPSRC)(EP/N00762X/1,EP/N013247/1,EP/R004951/1)Royal Academy of Engineering(RF201617/16/33)+6 种基金National Research Foundation Singapore(NRF)(NRFCRP12-2013-04)Royal Society(UF150325)European Project Cosmicc(H2020-ICT-27-2015-688516)China Scholarship Council(CSC)State Key Laboratory of Advanced Optical Communication Systems and Networks,ChinaEuropean Research Council under the European Union’s Seventh Framework Programme(FP7/2007-2013)H2020 European Research Council(ERC)(291216).
文摘We report mid-infrared Ge-on-Si waveguide-based PIN diode modulators operating at wavelengths of 3.8 and8 μm. Fabricated 1-mm-long electro-absorption devices exhibit a modulation depth of >35 dB with a 7 V forward bias at 3.8 μm, and a similar 1-mm-long Mach–Zehnder modulator has a Vπ· L of 0.47 V · cm. Driven by a 2.5 Vpp RF signal, 60 MHz on-off keying modulation was demonstrated. Electro-absorption modulation at 8 μm was demonstrated preliminarily, with the device performance limited by large contact separation and high contact resistance.